型號(hào): | μN(yùn)E76118 |
廠商: | NEC Corp. |
英文描述: | Low Noise Amplifier N-Channeal GaAs MES FET(低噪聲放大器N溝道MES FET) |
中文描述: | 低噪聲放大器蘼Channeal砷化鎵場(chǎng)效應(yīng)晶體管(低噪聲放大器?溝道場(chǎng)效應(yīng)晶體管) |
文件頁(yè)數(shù): | 4/8頁(yè) |
文件大?。?/td> | 51K |
代理商: | ΜNE76118 |
相關(guān)PDF資料 |
PDF描述 |
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5-1462000-0 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
5-1462000-9 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
5-1462000-1 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
5-1462000-3 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
5-1462000-5 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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NE76118_00 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER |
NE76118-T1 | 功能描述:MOSFET DISC BY CEL 1/02 SOT-343 GP MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
NE76118-T2 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER |
NE76184A | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
NE76184AS | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:GENERAL PURPOSE L TO X-BAND GaAs MESFET |