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參數(shù)資料
| 型號(hào)： | μN(yùn)E76118 |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise Amplifier N-Channeal GaAs MES FET(低噪聲放大器N溝道MES FET) |
| 中文描述： | 低噪聲放大器蘼Channeal砷化鎵場(chǎng)效應(yīng)晶體管（低噪聲放大器?溝道場(chǎng)效應(yīng)晶體管） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | ΜNE76118 |
3
NE76118
TYPICAL CHARACTERISTICS (T
A
= 25
q
C)
250
200
150
100
50
50
100
150
200
T
A
- Ambient Temperature - C
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
P
t
80
60
40
20
0
0
I
D
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
1
2
3
4
5
V
DS
= 3 V
–2.0
–1.0
0
V
GS
- Gate to Source Voltage - V
I
D
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
60
40
20
0
V
DS
= 3 V
f = 1 GHz
f = 2 GHz
20
I
D
- Drain Current - mA
|
2
|
2
FORWARD INSERTION GAIN vs.
DRAIN CURRENT
20
15
10
5
0
1
2
10
7
5
3
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PDF描述 |
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| 5-1462000-5 | 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE76118_00 | 制造商:NEC 制造商全稱:NEC 功能描述:GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER |
| NE76118-T1 | 功能描述:MOSFET DISC BY CEL 1/02 SOT-343 GP MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE76118-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER |
| NE76184A | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184AS | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE L TO X-BAND GaAs MESFET |
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