參數(shù)資料
型號： ZXTDB2M832
廠商： Zetex Semiconductor
英文描述： COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR
中文描述： 互補雙20V的低飽和晶體管
文件頁數(shù)： 1/8頁
文件大?。?/td> 264K
代理商： ZXTDB2M832
SUMMARY
NPN Transistor
V
CEO
= 20V; R
SAT
= 47m ;
C
= 4.5A
V
CEO
= -20V; R
SAT
= 64m ;
C
= -3.5A
PNP Transistor
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),
these low saturation NPN / PNP combination dual transistors offer lower on
state losses making them ideal for use in DC-DC circuits and various driving
and power-management functions.
Users will also gain several other
key benefits
:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
FEATURES
Low Equivalent On Resistance
Low Saturation Voltage
(150mV max @1A--NPN)
H
FE
specified up to 6A
I
C
= 4.5A Continuous Collector Current
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters
Charging circuits
Power switches
Motor control
DEVICE MARKING
DB2
ZXTDB2M832
ISSUE 2 - JUNE 2002
MPPS Miniature Package Power Solutions
COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR
1
B1
C1
E1
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTDB2M832TA
7
8mm
3000
ZXTDB2M832TC
13
8mm
10000
ORDERING INFORMATION
3mm x 2mm Dual Die MLP
3mm x 2mm Dual MLP
underside view
PINOUT
B2
C2
E2
相關(guān)PDF資料
PDF描述
ZXTDB2M832TA COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXTDB2M832TA 功能描述:兩極晶體管 - BJT 20V Dual 3X2 MLP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZXTDB2M832TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR
ZXTDBM832 制造商:ZETEX 制造商全稱:ZETEX 功能描述:MPPS-TM Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXTDBM832TA 功能描述:兩極晶體管 - BJT 20V NPN 3X2 MLP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZXTDBM832TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC
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