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參數(shù)資料
| 型號(hào)： | ZXTD4591E6TC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS |
| 中文描述： | 1000 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 348K |
| 代理商： | ZXTD4591E6TC |
ZXTD4591AM832
ISSUE 1 - JUNE 2002
2
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
C
I
B
P
D
40
-40
V
Collector-Emitter Voltage
40
-40
V
Emitter-Base Voltage
5
-5
V
Peak Pulse Current
3
-3
A
Continuous Collector Current (a)(f)
2
-1.5
A
Continuous Collector Current (b)(f)
2.5
-2.0
A
Base Current
300
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
P
D
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
P
D
3
24
W
mW/°C
Storage Temperature Range
T
stg
T
j
-55 to +150
°C
Junction Temperature
150
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
83.3
°C/W
Junction to Ambient (b)(f)
51
°C/W
Junction to Ambient (c)(f)
125
°C/W
Junction to Ambient (d)(f)
111
°C/W
Junction to Ambient (d)(g)
73.5
°C/W
Junction to Ambient (e)(g)
41.7
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached
. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached
. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
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