參數(shù)資料
型號(hào)： ZXTC2063E6
廠商： Zetex Semiconductor
英文描述： 40V, SOT23-6, complementary medium power transistors
中文描述： 40V的，采用SOT23 - 6，互補(bǔ)中等功率晶體管
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 599K
代理商： ZXTC2063E6
ZXTC2063E6
Issue 1 - October 2007
Zetex Semiconductors plc 2007
4
www.zetex.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
(base open)
Emitter-base
breakdown voltage
Emitter-collector
breakdown voltage
(reverse blocking)
Typ.
Max.
Unit Conditions
V
I
C
= (-)100 A
BV
CBO
130(-45) 170(-80)
BV
CEO
(-)40
63(-65)
V
I
C
= (-)10mA
(*)
*
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%
( ) = PNP
BV
EBO
(-)7
(-)8.3
V
I
E
= (-)100 A
BV
ECX
(-)6
(-)7.4
V
I
E
= (-)100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
(0.25V < V
BC
< -0.25V)
I
E
= (-)100 A
Emitter-collector
breakdown voltage
(base open)
Collector-base cut-off
current
BV
ECO
6(-3)
7.4(-8.7)
V
I
CBO
<1
(-)50
(-)20
(-)50
nA
A
nA
V
CB
=100(-36)V
V
CB
=100(-36)V, T
amb
= 100°C
V
EB
= (-)5.6V
Emitter-base cut-off
current
Collector-emitter
saturation voltage
I
EBO
<1
V
CE(sat)
50(-70)
85(-195) 110(-290)
150
(-175)
135
(-935)
960
(-855)
860
60(-90)
mV
mV
mV
mV
mV
mV
mV
mV
mV
I
C
= (-)1A, I
B
= (-)100mA *
I
C
= (-)1A, I
B
= (-)20mA *
I
C
= 2A, I
B
= 40mA *
(I
C
= -3A, I
B
= -300mA *)
I
C
= 3.5A, I
B
= 350mA *
(I
C
= -3A, I
B
= -300mA *)
I
C
= 3.5A, I
B
= 350mA *
(I
C
= -3A, V
CE
= -2V *)
I
C
= 3.5A, V
CE
= 2V *
I
C
= (-)10mA, V
CE
= (-)2V *
I
C
= (-)1A, V
CE
= (-)2V *
(I
C
= -3A, V
CE
= -2V *)
I
C
= 3.5A, V
CE
= 2V *
MHz I
C
= (-)50mA, V
CE
= (-)10V
f
= 100MHz
pF
V
CB
= (-)10V, f
= 1MHz *
ns
V
CC
= (-)10V. I
C
= (-)1A, I
B1
= I
B2
= (-)10mA.
ns
ns
ns
220
(-260)
195
(-1000)
1050
(-950)
950
Base-emitter saturation
voltage
V
BE(sat)
Base-emitter turn-on
voltage
V
BE(on)
Static forward current
transfer ratio
h
FE
( )300
280(200) 400(280)
(20)
40
( )450
( )900
(50)
60
190
(270)
Transition frequency
f
T
Output capacitance
Delay time
Rise time
Storage time
Fall time
C
OBO
t
d
t
r
t
s
t
f
12(17)
64(57)
108(69)
428(154)
130(60)
20(25)
相關(guān)PDF資料
PDF描述
ZXTC2063E6TA 40V, SOT23-6, complementary medium power transistors
ZXTD09N50DE6 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXTD09N50DE6TA DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXTD09N50DE6TC DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXTD1M832 MPPSTM Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXTC2063E6_08 制造商:ZETEX 制造商全稱:ZETEX 功能描述:40V, SOT23-6, complementary medium power transistors
ZXTC2063E6TA 功能描述:兩極晶體管 - BJT 40V 1A Medium Power TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZXTC4591AMC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
ZXTC4591AMCTA 功能描述:兩極晶體管 - BJT 40V High Perf Trans Ic = 3A 500mV 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZXTC6717MC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*