參數(shù)資料
型號(hào)： ZXMP3A13FTA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 30V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 1400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 202K
代理商： ZXMP3A13FTA
ZXMP3A13F
PROVISIONAL ISSUE C - J ULY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
-30
V
I
D
=-250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-1.4A
V
GS
=-4.5V, I
D
=-1.1A
V
DS
=-15V,I
D
=-1.4A
Zero Gate Voltage Drain Current
-0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
-1.0
V
Static Drain-Source On-State Resistance (1) R
DS (on)
0.210
0.330
Forward Transconductance (1)(3)
g
fs
2.48
S
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
204
pF
V
=-15V, V
GS
=0V,
f=1MHz
Output Capacitance
39.8
pF
Reverse Transfer Capacitance
25.8
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
1.5
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0 , V
GS
=-10V
Rise Time
2.8
ns
Turn-Off Delay Time
11.3
ns
Fall Time
7.5
ns
Gate Charge
2.58
nC
V
DS
=-15V,V
GS
=-5V,
I
D
=-1.4A
Total Gate Charge
Q
g
Q
gs
Q
gd
5.15
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-1.4A
Gate-Source Charge
0.65
nC
Gate-Drain Charge
0.92
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-1.1A,
V
GS
=0V
T
=25°C, I
=-0.95A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
t
rr
Q
rr
18.6
ns
Reverse Recovery Charge (3)
14.8
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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