- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373846 > ZXMN6A11DN8TC (ZETEX PLC) TOOLS,HEX BITS,SETS,GORILLA-GRIP FOLD-UP TOOL SET,7-PC.TAMPER-RESISTANT, TR7-TR25,HAND TOOLS,GORILLA GRIP<SUP>®</SUP> FOLD-UP TOOL SETS ,BONDHUS PDF資料下載
參數(shù)資料
| 型號： | ZXMN6A11DN8TC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TOOLS,HEX BITS,SETS,GORILLA-GRIP FOLD-UP TOOL SET,7-PC.TAMPER-RESISTANT, TR7-TR25,HAND TOOLS,GORILLA GRIP<SUP>®</SUP> FOLD-UP TOOL SETS ,BONDHUS |
| 中文描述： | 2100 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 787K |
| 代理商： | ZXMN6A11DN8TC |
ZXMN6A11DN8
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
60
V
ID=250
μ
A, VGS=0V
VDS=60V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=4.4A
VGS=4.5V, ID=3.8A
VDS=15V,ID=2.5A
Zero Gate Voltage Drain Current
1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
V
Static Drain-Source On-State
Resistance (1)
0.14
0.25
Forward Transconductance (3)
gfs
4.9
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
330
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
35.0
pF
Reverse Transfer Capacitance
17.0
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
1.95
ns
VDD=15V, ID=2.5A
RG=6.0 ,VGS=10V
(refer to test circuit)
Rise Time
3.5
ns
Turn-Off Delay Time
8.2
ns
Fall Time
4.6
ns
Gate Charge
3.0
nC
VDS=15V, VGS=5V,
ID=2.5A
VDS=15V,VGS=10V,
I
=2.5A
(refer to test circuit)
Total Gate Charge
Qg
Qgs
Qgd
5.7
nC
Gate-Source Charge
1.25
nC
Gate-Drain Charge
0.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25°C, IS=2.8A,
VGS=0V
TJ=25°C, IF=2.5A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
21.5
ns
Reverse Recovery Charge (3)
20.5
nC
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
相關PDF資料 |
PDF描述 |
|---|---|
| ZXMN6A11G | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A11GFTA | ; Current Rating:6A; Voltage Rating:250V; Mounting Type:Screw; Features:High Attenuation; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No |
| ZXMN6A11GFTC | Line Filter; Current Rating:10A; Voltage Rating:250V; Mounting Type:Screw; Features:High Attenuation; Series:MXB |
| ZXMN6A25DN8TA | DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A25DN8 | Line Filter; Current Rating:20A; Voltage Rating:250V; Mounting Type:Screw; Features:High Attenuation; Series:MXB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN6A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 4.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:4;RoHS Compliant: Yes |
| ZXMN6A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN6A11G_06 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A11GFTA | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A11GFTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。