參數(shù)資料
型號： ZXMN6A11DN8
廠商： Zetex Semiconductor
英文描述： TOOLS,HEX BITS,SETS,FOLD-UP HEX KEY HAND TOOL, 6 BITS SIZES 3 THRU 10MM,HAND TOOLS,GORILLA GRIP<SUP>&#174;</SUP> FOLD-UP TOOL SETS ,BONDHUS
中文描述： 60V的N溝道增強型MOS管
文件頁數(shù)： 4/7頁
文件大?。?/td> 787K
代理商： ZXMN6A11DN8
ZXMN6A11DN8
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
60
V
ID=250
μ
A, VGS=0V
VDS=60V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=4.4A
VGS=4.5V, ID=3.8A
VDS=15V,ID=2.5A
Zero Gate Voltage Drain Current
1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
V
Static Drain-Source On-State
Resistance (1)
0.14
0.25
Forward Transconductance (3)
gfs
4.9
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
330
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
35.0
pF
Reverse Transfer Capacitance
17.0
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
1.95
ns
VDD=15V, ID=2.5A
RG=6.0 ,VGS=10V
(refer to test circuit)
Rise Time
3.5
ns
Turn-Off Delay Time
8.2
ns
Fall Time
4.6
ns
Gate Charge
3.0
nC
VDS=15V, VGS=5V,
ID=2.5A
VDS=15V,VGS=10V,
I
=2.5A
(refer to test circuit)
Total Gate Charge
Qg
Qgs
Qgd
5.7
nC
Gate-Source Charge
1.25
nC
Gate-Drain Charge
0.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25°C, IS=2.8A,
VGS=0V
TJ=25°C, IF=2.5A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
21.5
ns
Reverse Recovery Charge (3)
20.5
nC
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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參數(shù)描述
ZXMN6A11DN8_06 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V SO8 Dual N-channel enhancement mode MOSFET
ZXMN6A11DN8TA 功能描述:MOSFET Dl 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN6A11DN8TC 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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ZXMN6A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223
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