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參數資料
| 型號： | ZXMN6A09KTC |
| 廠商： | ZETEX PLC |
| 元件分類： | JFETs |
| 英文描述： | 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK |
| 中文描述： | 7.3 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252, DPAK-3 |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 156K |
| 代理商： | ZXMN6A09KTC |
ZXMN6A09K
S E M IC O N D U C T O R S
ISSUE 3 - J ANUARY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DS S
60
V
I
D
= 250 A, V
GS
=0V
Zero gate voltage drain current
I
DS S
1
A
V
DS
= 60V, V
GS
=0V
Gate-body leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS (th)
1.0
V
I
D
= 250 A, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS (on)
0.045
V
GS
= 10V, I
D
= 7.3A
0.070
V
GS
= 4.5V, I
D
= 5.6A
Forward transconductance
(1) (3)
g
fs
15
S
V
DS
= 15V, I
D
= 7.3A
DYNAMIC
(3)
Input capacitance
C
iss
1426
pF
V
DS
= 30V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
134
pF
Reverse transfer capacitance
C
rss
64
pF
SWITCHING
(2) (3)
Turn-on-delay time
t
d(on)
4.8
ns
V
DD
= 30V, I
D
= 1A
R
G
6.0 , V
GS
= 10V
(refer to test circuit)
Rise time
t
r
4.6
ns
Turn-off delay time
t
d(off)
32.5
ns
Fall time
t
f
14.5
ns
Total gate charge
Q
g
15
nC
V
DS
= 30V, V
GS
= 4.5V
I
D
= 5.6A
Total gate charge
Q
g
29
nC
V
DS
= 30V, V
GS
= 10V
I
D
= 7.3A
Gate-source charge
Q
gs
7.0
nC
Gate drain charge
Q
gd
4.7
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
S D
0.85
0.95
V
T
j
=25°C, I
S
= 6.6A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
25.6
ns
T
j
=25°C, I
S
= 3A,
di/dt=100A/ s
Reverse recovery charge
(3)
Q
rr
26.0
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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