參數(shù)資料
型號: ZXMN6A09K
廠商: Zetex Semiconductor
英文描述: 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
中文描述: 60V的N溝道增強型MOSFET采用DPAK
文件頁數(shù): 2/7頁
文件大?。?/td> 156K
代理商: ZXMN6A09K
ZXMN6A09K
S E M IC O N D U C T O R S
ISSUE 3 - J ANUARY 2004
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DS S
60
V
Gate-source voltage
V
GS
±20
V
Continuous drain current @ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=70°C
@ V
GS
=10V; T
A
=25°C
(b)
(a)
I
D
11.2
9.0
7.3
A
Pulsed drain current
(c)
I
DM
40
A
Continuous source current (body diode)
(b)
I
S
10.8
A
Pulsed source current (body diode)
(c)
I
S M
40
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
4.3
34.4
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
10.1
80.8
W
mW/°C
Power dissipation at T
A
=25°C
(d)
Linear derating factor
P
D
2.15
17.2
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
J unction to ambient
(a)
R
J A
29
°C/W
J unction to ambient
(b)
R
J A
12.3
°C/W
J unction to ambient
(d)
R
J A
58
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
相關(guān)PDF資料
PDF描述
ZXMN6A09KTC 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
ZXMN6A11DN8 TOOLS,HEX BITS,SETS,FOLD-UP HEX KEY HAND TOOL, 6 BITS SIZES 3 THRU 10MM,HAND TOOLS,GORILLA GRIP<SUP>&#174;</SUP> FOLD-UP TOOL SETS ,BONDHUS
ZXMN6A11DN8TA TOOLS,HEX BITS,SETS,FOLD UP TOOL SET, GORILLA GRIP, NUMBER OF PIECE-8, SIZE T9, T10, T15, T20, T25, T27, T30, T40,HAND TOOLS,GORILLA GRIP<SUP>&#174;</SUP> FOLD-UP TOOL SETS ,BONDHUS RoHS Compliant: NA
ZXMN6A11DN8TC TOOLS,HEX BITS,SETS,GORILLA-GRIP FOLD-UP TOOL SET,7-PC.TAMPER-RESISTANT, TR7-TR25,HAND TOOLS,GORILLA GRIP<SUP>&#174;</SUP> FOLD-UP TOOL SETS ,BONDHUS
ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMN6A09K_07 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-channel enhancement mode MOSFET in DPAK
ZXMN6A09KTC 功能描述:MOSFET MOSFET N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN6A10N8TA 功能描述:MOSFET N-CH 60V 7.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
ZXMN6A11DN8 制造商:Diodes Incorporated 功能描述:MOSFET N DUAL SO-8
ZXMN6A11DN8_06 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V SO8 Dual N-channel enhancement mode MOSFET