參數(shù)資料
型號： ZXMN6A09G(1)
廠商： Zetex Semiconductor
文件頁數(shù)： 2/7頁
文件大小： 195K
代理商： ZXMN6A09G(1)
ZXMN6A09G
S E M IC O N D U C T O R S
PROVISIONAL ISSUE D - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a)(d)
R
θ
J A
62.5
°C/W
J unction to Ambient
(b)(d)
R
θ
J A
32.2
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
A BS OLUTE MA X IMUM RA TINGS .
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
60
V
Gate Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25°C)
(b)
20
V
(V
GS
=10V; T
A
=70°C)
(b)
(V
GS
=10V; T
A
=25°C)
(a)
6.9
5.6
5.0
A
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)(d)
Linear Derating Factor
I
DM
I
S
I
S M
P
D
30.6
A
3.5
A
30.6
A
2.0
16
W
mW/°C
P
D
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
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相關代理商/技術參數(shù)
參數(shù)描述
ZXMN6A09GTA 功能描述:MOSFET N-Ch 60V 7.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN6A09GTC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
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ZXMN6A09KTC 功能描述:MOSFET MOSFET N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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