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參數(shù)資料
| 型號： | ZXMN6A08E6 |
| 廠商： | Zetex Semiconductor |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| 中文描述： | 60V的N溝道增強型MOS管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 850K |
| 代理商： | ZXMN6A08E6 |
ZXMN6A08E6
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
60
V
ID=250 A, VGS=0V
VDS=60V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=4.8A
VGS=4.5V, ID=4.2A
VDS=15V,ID=4.8A
Zero Gate Voltage Drain Current
0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1
V
Static Drain-Source On-State Resistance
(1)
0.100
0.180
Forward Transconductance (1)(3)
gfs
6.6
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
459
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
44.2
pF
Reverse Transfer Capacitance
24.1
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
2.6
ns
VDD=30V, ID=1.5A
RG=6.0 , VGS=10V
Rise Time
2.1
ns
Turn-Off Delay Time
12.3
ns
Fall Time
4.6
ns
Gate Charge
4.0
nC
VDS=30V,VGS=5V,
I
D
=1.4A
Total Gate Charge
Qg
Qgs
Qgd
5.8
nC
VDS=30V,VGS=10V,
I
D
=1.4A
Gate-Source Charge
1.4
nC
Gate-Drain Charge
1.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.88
1.2
V
TJ=25°C, IS=4A,
VGS=0V
TJ=25°C, IF=1.4A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
19.2
ns
Reverse Recovery Charge (3)
30.3
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN6A08E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 |
| ZXMN6A08E6_06 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A08E6QTA | 制造商:Diodes Incorporated 功能描述: |
| ZXMN6A08E6TA | 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN6A08E6TA-CUT TAPE | 制造商:DIODES 功能描述:ZXMN6A08 Series 60 V 0.08 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6 |
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