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參數(shù)資料
| 型號： | ZXMN6A07ZTA |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TV 6C 6#20 SKT PLUG RECP |
| 中文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 1011K |
| 代理商： | ZXMN6A07ZTA |
ZXMN6A07Z
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
60
V
ID=250 A, VGS=0V
VDS=60V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=1.8A
VGS=4.5V, ID=1.3A
VDS=15V,ID=1.8A
Zero Gate Voltage Drain Current
1.0
A
Gate-Body Leakage
60
nA
Gate-Source Threshold Voltage
1.0
3.0
V
Static Drain-Source On-State Resistance
(1)
0.3
0.40
0.55
Forward Transconductance (1)(3)
gfs
2.3
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
166
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
19.5
pF
Reverse Transfer Capacitance
8.7
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
1.8
ns
VDD=30V, ID=1.8A
RG=6.0 , VGS=10V
Rise Time
1.4
ns
Turn-Off Delay Time
4.9
ns
Fall Time
2.0
ns
Gate Charge
1.65
nC
VDS= 30V, VGS=5V
ID= 1.8A
Total Gate Charge
Qg
Qgs
Qgd
3.2
nC
VDS=30V,VGS=10V,
ID=1.8A
Gate-Source Charge
0.67
nC
Gate-Drain Charge
0.82
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25°C, IS=1.5A,
VGS=0V
TJ=25°C, IF=1.0A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
20.5
ns
Reverse Recovery Charge (3)
21.3
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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