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參數(shù)資料
| 型號： | ZXMN3B04N8TC |
| 廠商： | ZETEX PLC |
| 元件分類： | JFETs |
| 英文描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| 中文描述： | 7.2 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 176K |
| 代理商： | ZXMN3B04N8TC |
ZXMN3B04N8
S E M IC O N D U C T O R S
ISSUE 2 - MAY 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to ambient
(a)
R
J A
62.5
°C/W
J unction to ambient
(b)
R
J A
41.4
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DS S
V
GS
I
D
30
V
Gate source voltage
12
V
Continuous drain current
@ V
GS
=4.5V; T
A
=25°C
(b)
@ V
GS
=4.5V; T
A
=70°C
(b)
@ V
GS
=4.5V; T
A
=25°C
(a)
8.9
7.3
7.2
A
A
A
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
I
DM
I
S
I
S M
P
D
45
A
4.5
A
45
A
2
16
W
mW/°C
P
D
3
24
W
mW/°C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
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相關代理商/技術參數(shù) |
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|---|---|
| ZXMN3B14F | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14F(2) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ZXMN3B14F_06 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14FTA | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3B14FTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
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