- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373846 > ZXMN3B04N8 (ZETEX PLC) 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE PDF資料下載
參數(shù)資料
| 型號(hào)： | ZXMN3B04N8 |
| 廠(chǎng)商： | ZETEX PLC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| 中文描述： | 7.6 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 176K |
| 代理商： | ZXMN3B04N8 |
ZXMN3B04N8
S E M IC O N D U C T O R S
ISSUE 2 - MAY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
30
V
I
D
=250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=
12V, V
DS
=0V
I
D
=250 A, V
DS
= V
GS
V
GS
=4.5V, I
D
=7.2A
V
GS
=2.5V, I
D
=5.7A
Zero gate voltage drain current
0.5
A
Gate-body leakage
100
nA
Gate-source threshold voltage
0.7
V
Static drain-source on-state
resistance
(1)
Forward transconductance
(1) (3)
DYNAMIC
(3)
0.021
0.028
0.025
0.040
g
fs
24
S
V
DS
=15V,I
D
=7.2A
Input capacitance
C
iss
C
oss
C
rss
2480
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Output capacitance
318
pF
Reverse transfer capacitance
SWITCHING
(2) (3)
184
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
9
ns
V
DD
=15V, V
GS
=4.5V
I
D
=1A
R
G
6.0 ,
Rise time
11.5
ns
Turn-off delay time
40
ns
Fall time
16.6
ns
Total gate charge
23.1
nC
V
DS
=15V,V
GS
=4.5V,
I
D
=7.2A
Gate-source charge
4.9
nC
Gate-drain charge
6.2
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
S D
0.85
0.95
V
T
J
=25°C, I
S
=8A,
V
GS
=0V
T
J
=25°C, I
F
=3.2A,
di/dt= 100A/ s
Reverse recovery time
(3)
Reverse recovery charge
(3)
t
rr
Q
rr
17.9
ns
10
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXMN3B04N8TA | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B04N8TC | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14F | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14FTA | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14FTC | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN3B04N8TA | 功能描述:MOSFET 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3B04N8TC | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3B14F | 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14F(2) | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述: |
| ZXMN3B14F_06 | 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。