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參數(shù)資料
| 型號： | ZXMN3A14FTC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 209K |
| 代理商： | ZXMN3A14FTC |
ZXMN3A14F
S E M IC O N D U C T O R S
PROVISIONAL ISSUE B - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a)
R
J A
125
°C/W
J unction to Ambient
(b)
R
J A
83
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
30
V
Gate-Source Voltage
20
V
Continuous Drain Current @ V
GS
= 10V; T
A
=25°C
(b)
@ V
GS
= 10V; T
A
=70°C
@ V
GS
= 10V; T
A
=25°C
(b)
(a)
3.9
3.2
3.2
A
A
A
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
I
DM
I
S
I
S M
P
D
18
A
2.3
A
18
A
1
8
W
mW/°C
P
D
1.5
12
W
mW/°C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
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