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參數(shù)資料
| 型號： | ZXMN3A04DN8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 雙30V的N溝道增強型MOS管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | ZXMN3A04DN8 |
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN3A04DN8
3
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
0.5
μ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1.0
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1)
R
DS (on)
0.02
0.03
V
GS
=10V, I
D
=12.6A
V
GS
=4.5V, I
D
=10.6A
Forward Transconductance (3)
g
fs
17.5
S
V
DS
=15V,I
D
=6A
DYNAMIC
(3)
Input Capacitance
C
iss
1800
pF
V
=25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
289
pF
Reverse Transfer Capacitance
C
rss
178
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
5.5
ns
V
DD
=15V, I
D
=6A
R
G
=6.0
, V
GS
=10V
Rise Time
t
r
8.7
ns
Turn-Off Delay Time
t
d(off)
33
ns
Fall Time
t
f
8.5
ns
Gate Charge
Q
g
19.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
35.7
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge
Q
gs
5.5
nC
Gate-Drain Charge
Q
gd
7.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.95
V
T
J
=25°C, I
S
=6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
20.5
ns
T
=25°C, I
=6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
41.5
nC
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關代理商/技術參數(shù) |
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|---|---|
| ZXMN3A04DN8 | 制造商:Diodes Incorporated 功能描述:MOSFET N DUAL SO-8 |
| ZXMN3A04DN8_02 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN3A04DN8TA | 功能描述:MOSFET Dl 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3A04DN8TC | 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3A04K | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK |
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