參數資料
型號： ZXMN3A02N8TC
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁數： 4/7頁
文件大?。?/td> 450K
代理商： ZXMN3A02N8TC
ZXMN3A02X8
ISSUE 1 - JANUARY 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
μ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1
V
I
D
=250
μ
A, V
DS
= V
GS
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10.2A
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.025
0.035
Forward Transconductance (1)(3)
g
fs
22
S
V
DS
=10V,I
D
=12A
DYNAMIC
(3)
Input Capacitance
C
iss
1400
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
209
pF
Reverse Transfer Capacitance
C
rss
120
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
3.9
ns
V
DD
=15V, I
D
=5.5A
R
G
=6.2
, V
GS
=10V
(refer to test circuit)
Rise Time
t
r
5.5
ns
Turn-Off Delay Time
t
d(off)
35.0
ns
Fall Time
t
f
7.6
ns
Gate Charge
Q
g
14.5
nC
V
DS
=15V,V
GS
=5V,
I
D=5.5A
(refer to test circuit)
Total Gate Charge
Q
g
26.8
nC
V
DS
=15V,V
GS
=10V,
I
D
=5.5A
(refer to test circuit)
Gate-Source Charge
Q
gs
4.7
nC
Gate-Drain Charge
Q
gd
4.7
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25°C, I
S
=9A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
17
ns
T
J
=25°C, I
F
=5.5A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
8.3
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關代理商/技術參數
參數描述
ZXMN3A02X8 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A02X8TA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN3A02X8TC 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN3A03E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 4.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:6 ;RoHS Compliant: Yes
ZXMN3A03E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
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