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參數(shù)資料
| 型號： | ZXMD63N02XTC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 2400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA |
| 封裝： | MSOP-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 177K |
| 代理商： | ZXMD63N02XTC |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
μ
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.130
0.150
V
GS
=4.5V, I
D
=1.7A
V
GS
=2.7V, I
D
=0.85A
Forward Transconductance (3)
g
fs
2.6
S
V
DS
=10V,I
D
=0.85A
DYNAMIC (3)
Input Capacitance
C
iss
350
pF
V
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
50
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
3.4
ns
V
DD
=10V, I
D
=1.7A
R
=6.0
, R
=5.7
(Refer to test
circuit)
Rise Time
t
r
8.1
ns
Turn-Off Delay Time
t
d(off)
13.5
ns
Fall Time
t
f
9.1
ns
Total Gate Charge
Q
g
6
nC
V
DS
=16V,V
GS
=4.5V,
I
=1.7A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
0.65
nC
Gate Drain Charge
Q
gd
2.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25°C, I
S
=1.7A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
15.0
ns
T
=25°C, I
=1.7A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
5.9
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMD63N02X
28
PROVISIONAL ISSUE A - JUNE 1999
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