參數(shù)資料
型號: ZXMD63N02X
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述: 1800 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MSOP-8
文件頁數(shù): 6/7頁
文件大小: 177K
代理商: ZXMD63N02X
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
TYPICAL CHARACTERISTICS
0.1
10
100
0
3
6
V
DS
- Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
400
800
C
ID=1.7A
V
G
5
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=16V
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
1
100
700
600
500
300
200
1
2
4
3
1
2
4
5
ZXMD63N02X
30
PROVISIONAL ISSUE A - JUNE 1999
相關(guān)PDF資料
PDF描述
ZXMD63N02XTA DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02XTC DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N03XTA DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N03XTC DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMD63N02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8
ZXMD63N02XTA 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63N02XTC 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63N03X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8
ZXMD63N03X_05 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET