參數(shù)資料
型號： ZXMC6A09DN8TA
廠商： ZETEX PLC
元件分類： JFETs
英文描述： COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
中文描述： 5.1 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 5/10頁
文件大?。?/td> 290K
代理商： ZXMC6A09DN8TA
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-60
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1.0
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-2.9A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.055
0.080
Forward Transconductance
(1)(3)
g
fs
9.3
S
V
DS
=-15V,I
D
=-3.5A
DYNAMIC
(3)
Input Capacitance
C
iss
1706
pF
V
=-30 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
111
pF
Reverse Transfer Capacitance
C
rss
68.0
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.3
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
, V
GS
=-10V
Rise Time
t
r
29.0
ns
Turn-Off Delay Time
t
d(off)
59.8
ns
Fall Time
t
f
28.1
ns
Gate Charge
Q
g
20.8
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total Gate Charge
Q
g
41.0
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Gate-Source Charge
Q
gs
4.1
nC
Gate-Drain Charge
Q
gd
6.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-4.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
30.6
ns
T
=25°C, I
=-2.1A,
di/dt= 100A/
μ
s
Reverse Recovery Charge
(3)
Q
rr
41.3
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關代理商/技術參數(shù)
參數(shù)描述
ZXMC6A09DN8TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
ZXMD63C02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NP MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NP, MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, N & P CH, DUAL, 30V, 2.4A, MSOP-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W ;RoHS Compliant: Yes
ZXMD63C02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NP MSOP8
ZXMD63C02XTA 功能描述:MOSFET 20V N&P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63C02XTC 功能描述:MOSFET 20V N&P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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