參數(shù)資料
型號： ZXMC3A18DN8TA
廠商： ZETEX PLC
元件分類： JFETs
英文描述： COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
中文描述： 7.6 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁數(shù)： 4/8頁
文件大?。?/td> 187K
代理商： ZXMC3A18DN8TA
ZXMC3A18DN8
S E M IC O N D U C T O R S
DRAFT ISSUE C - J UNE 2003
ADVANCE INFORMATION
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
30
V
I
D
= 250 A, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.3A
V
DS
= 15V, I
D
= 5.8A
Zero Gate Voltage Drain Current
0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
V
Static Drain-Source On-State
Resistance
(1)
0.025
0.030
Forward Transconductance
(1) (3)
DYNAMIC
(3)
g
fs
17.5
S
Input Capacitance
C
iss
C
oss
C
rss
1800
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output Capacitance
289
pF
Reverse Transfer Capacitance
SWITCHING
(2) (3)
178
pF
Turn-On-Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
5.5
ns
V
DD
= 15V, I
D
=6A
R
G
6.0 ,
V
GS
= 10V
Rise Time
8.7
ns
Turn-Off Delay Time
33
ns
Fall Time
8.5
ns
Gate Charge
19.4
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total Gate Charge
Q
g
Q
gs
Q
gd
36
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-Source Charge
5.5
nC
Gate-Drain Charge
7.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.95
V
T
j
=25°C, I
S
= 6A,
V
GS
=0V
T
j
=25°C, I
F
= 6A,
di/dt=100A/ s
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
Q
rr
20.5
ns
41.5
nC
N-Channel
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300ms; Duty cycle
2%.
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ZXMC3A18DN8TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
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