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參數(shù)資料
| 型號(hào)： | ZXMC3A17DN8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
| 中文描述： | 互補(bǔ)30V的增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 276K |
| 代理商： | ZXMC3A17DN8 |
ZXMC3A17DN8
S E M IC O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
ADVANCE INFORMATION
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DS S
30
V
I
D
= 250 A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DS S
0.5
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
1.0
V
I
D
= 250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS (on)
0.050
0.065
V
GS
= 10V, I
D
= 7.8A
V
GS
= 4.5V, I
D
= 6.8A
Forward
Transconductance
(1) (3)
g
fs
10
S
V
DS
= 10V, I
D
= 7.8A
DYNAMIC
(3)
Input Capacitance
C
iss
600
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
104
pF
Reverse Transfer Capacitance
C
rss
58.5
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
2.9
ns
V
DD
= 15V, I
D
=3.5A
R
G
6.0 ,
V
GS
= 10V
Rise Time
t
r
6.4
ns
Turn-Off Delay Time
t
d(off)
16
ns
Fall Time
t
f
11.2
ns
Gate Charge
Q
g
6.9
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total Gate Charge
Q
g
12.2
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-Source Charge
Q
gs
1.7
nC
Gate-Drain Charge
Q
gd
2.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.85
0.95
V
T
j
=25°C, I
S
= 3.2A,
V
GS
=0V
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
18.8
ns
T
j
=25°C, I
F
= 3.5A,
di/dt=100A/ s
Q
rr
14.1
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
(1)
(2)
(3)
Measured under pulsed conditions. Pulse width
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
300ms; Duty cycle
2%.
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| ZXMC3A18DN8_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
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