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參數(shù)資料
| 型號(hào)： | ZXM66P03N8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 30V的P溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 49K |
| 代理商： | ZXM66P03N8 |
PROVISIONAL ISSUE A - MAY 2001
ZXM66P03N8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNI
T
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
-1
μ
A
V
DS
=-24V, V
GS
=0V
Gate-Body Leakage
I
GS S
-100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
-1.0
V
I
D
=-250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.025
0.035
V
GS
=-10V, I
D
=-5.6A
V
GS
=-4.5V, I
D
=-2.8A
Forward Transconductance (1)(3)
g
fs
14.4
S
V
DS
=-15V,I
D
=-5.6A
DYNAMIC (3)
Input Capacitance
C
iss
1979
pF
V
=-25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
743
pF
Reverse Transfer Capacitance
C
rss
279
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
7.6
ns
V
DD
=-15V, I
D
=-5.6A
R
G
=6.2
, V
GS
=-10V
Rise Time
t
r
16.3
ns
Turn-Off Delay Time
t
d(off)
94.6
ns
Fall Time
t
f
39.6
ns
Gate Charge
Q
g
36
nC
V
DS
=-15V,V
GS
=-5V
I
D
=-5.6A
Total Gate Charge
Q
g
62.5
nC
V
DS
=-15V,V
GS
=-10V
I
D
=-5.6A
Gate-Source Charge
Q
gs
4.9
nC
Gate Drain Charge
Q
gd
19.6
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
-0.95
V
T
j
=25°C, I
S
=-5.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
35
ns
T
=25°C, I
=-5.6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
39.9
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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參數(shù)描述 |
|---|---|
| ZXM66P03N8(1) | 制造商:ZETEX 制造商全稱:ZETEX 功能描述: |
| ZXM66P03N8TA | 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM66P03N8TC | 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMC10A816DN8TC | 制造商:Diodes Incorporated 功能描述: |
| ZXMC10A816N8 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100V SO8 Complementary Dual enhancement mode MOSFET |
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