參數(shù)資料
型號(hào)： ZXM66P03N8(1)
廠商： Zetex Semiconductor
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 49K
代理商： ZXM66P03N8(1)
PROVISIONAL ISSUE A - MAY 2001
ZXM66P03N8
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
80
°C/W
J unction to Ambient (b)
R
θ
J A
50
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum
junction temperature.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
-30
±
20
-7.9
-6.3
-6.25
V
Gate- Source Voltage
V
Continuous Drain Current V
GS
=-10V; T
A
=25°C(b)
V
GS
=-10V; T
A
=70°C(b)
V
GS
=-10V; T
A
=25°C(a)
A
Pulsed Drain Current (c)
I
DM
I
S
I
S M
P
D
-28
A
Continuous Source Current (Body Diode)(b)
-4.1
A
Pulsed Source Current (Body Diode)(c)
-28
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
1.56
12.5
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
2.5
20
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
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