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參數(shù)資料
| 型號： | ZXM64P035G |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 35V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 35V的P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | ZXM64P035G |
ZXM64P035G
PROVISIONAL ISSUE A - DECEMBER 2001
3
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-35
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-35V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-10V, I
D
=-2.4A
V
GS
=-4.5V, I
D
=-1.2A
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.075
0.105
Forward Transconductance (1)(3)
g
fs
2.3
S
V
DS
=-10V,I
D
=-1.2A
DYNAMIC
(3)
Input Capacitance
C
iss
825
pF
V
DS
=-25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
250
pF
Reverse Transfer Capacitance
C
rss
80
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.4
ns
V
DD
=-15V, I
D
=-2.4A
R
G
=6.0
,
V
GS
=-10V
Rise Time
t
r
6.2
ns
Turn-Off Delay Time
t
d(off)
40
ns
Fall Time
t
f
29.2
ns
Total Gate Charge
Q
g
46
nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-2.4A
Gate-Source Charge
Q
gs
9
nC
Gate-Drain Charge
Q
gd
11.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
J
=25 C, I
S
=-2.4A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
30.2
ns
T
J
=25 C, I
F
=-2.4A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Q
rr
27.8
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
2% .
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXM64P035G(1) | 制造商:ZETEX 制造商全稱:ZETEX 功能描述: |
| ZXM64P035GTA | 功能描述:MOSFET 35V P-Chnl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM64P035GTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:35V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM64P035L3 | 功能描述:MOSFET 35V P-Chnl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM64P035L3(1) | 制造商:ZETEX 制造商全稱:ZETEX 功能描述: |
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