參數(shù)資料
型號: ZXM64NO3X
廠商: Zetex Semiconductor
英文描述: MC680X0 FPU COPROCESSOR
中文描述: 高效率SIMPLESYNC的PWM DC - DC控制器
文件頁數(shù): 24/28頁
文件大?。?/td> 287K
代理商: ZXM64NO3X
24
ISSUE 4 - OCTOBER 2000
N channel devices offer high efficiency
performance for switching applications.
This family of MOS FETs from Zetex offers a
combination of low on-resistance and low gate charge,
providing optimum performance and high efficiency
for switching applications such as DC - DC conversion.
On resistance is low across the family, from only 40m
(max) for the ZXM64N02X part up to 180m
(max) for
the ZXM61N02F. This means that on-state losses are
minimised, improving efficiency in low frequency drive
applications. Threshold voltages of 0.7V and 1V
minimum allow the MOSFETs to be driven from low
voltage sources.
To minimise switching losses, and hence increase the
efficiency of high frequency operation, gate charge (Qg)
is small. The maximum Qg varies from 3.4nC to 16nC
depending on which device is chosen. C
rss
(Miller
capacitance) is also low, e.g. typically 30pF for the
ZXM6203E6 device. This results in better efficiency in
high frequency applications.
P channel MOSFETs excel in load
switching applications.
The P-channel MOS FETs offer highly efficient
performance for low voltage load switching
applications. This helps increase battery life in portable
equipment.
Minimum threshold voltage is low, only 0.7V or 1V,
enabling the MOS FETs to provide optimum
performance from a low voltage source. To ensure the
device suitability for low voltage applications, drain to
source voltage is specified at 20V or 30V.
To minimise on-state losses, and improve efficiency in
in low frequency drive applications, the on-resistance
(R
DS(ON)
) is low across the range. For example, the
ZXM64P03X has an R
DS(ON)
of only 100m
at a gate to
source voltage of 4.5V.
Gate source charge is also low, easing requirements for
the gate driver. Maximum values range from 0.62nC for
the ZXM61P03F, up to 9nC for the ZXM64P03X.
Small outline surface mount packaging
The products have been designed to optimise the
performance of a range of packages. The parts are
offered in SOT23, SOT23-6 and MSOP8 packages. The
MSOP8 enables single or dual devices to be offered.
The MSOP8 is also half the size of competitive SO8
devices and 20% smaller than TSSOP8 alternatives.
Product performance
The following performance characteristics show the
capabilities of the ZX M64N02X . This device is
recommended for use with certain configurations of
the ZXRD DCDC controller circuit.
ZXCM6 Series
Low voltage MOSFETs
Unique structure gives optimum performance for switching applications.
ZXRD1000 SERIES
相關(guān)PDF資料
PDF描述
ZXRD1000 HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS
ZXRD1033NQ16 Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3121; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
ZXRD1033PQ16 Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3121; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
ZXRD1050NQ16 PTSE 30C 29#20 1#16 PIN RECP
ZXRD1050PQ16 PTSE 30C 29#20 1#16 PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM64P02X 制造商:ZETEX 制造商全稱:ZETEX 功能描述:HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS
ZXM64P02X_04 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM64P02XTA 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM64P02XTC 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM64P03 制造商:ZETEX 制造商全稱:ZETEX 功能描述:35V P-CHANNEL ENHANCEMENT MODE MOSFET