參數(shù)資料
型號： ZXM64N03XTA
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA
封裝： MSOP-8
文件頁數(shù)： 4/7頁
文件大小： 190K
代理商： ZXM64N03XTA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
μ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.045
0.060
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
Forward Transconductance (3)
g
fs
4.3
S
V
DS
=10V,I
D
=1.9A
DYNAMIC
(3)
Input Capacitance
C
iss
950
pF
V
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
200
pF
Reverse Transfer Capacitance
C
rss
50
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.2
ns
V
DD
=5V, I
D
=3.7A
R
=6.2
, R
=4.0
(Refer to test
circuit)
Rise Time
t
r
4.5
ns
Turn-Off Delay Time
t
d(off)
20.5
ns
Fall Time
t
f
8
ns
Total Gate Charge
Q
g
27
nC
V
DS
=24V,V
GS
=10V,
I
=3.7A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
5
nC
Gate Drain Charge
Q
gd
4.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25°C, I
S
=3.7A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
24.5
ns
T
=25°C, I
=3.7A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
19.1
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
132
ZXM64N03X
PROVISIONAL ISSUE A - JULY 1999
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