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| 型號： | ZXM64N035G |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 16 BIT HYBRID CONTROLLER |
| 中文描述： | 35V的N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | ZXM64N035G |
ZXM64N035G
PROVISIONAL ISSUE A - JANUARY 2002
3
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
35
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=35V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250 A, V
DS
= V
GS
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.050
0.062
Forward Transconductance (1)(3)
g
fs
4.3
S
V
DS
=10V,I
D
=1.9A
DYNAMIC
(3)
Input Capacitance
C
iss
950
pF
V
DS
=25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
200
pF
Reverse Transfer Capacitance
C
rss
50
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.2
ns
V
DD
=15V, I
D
=3.7A
R
G
=6.0
,
V
GS
=10V
Rise Time
t
r
4.6
ns
Turn-Off Delay Time
t
d(off)
20.5
ns
Fall Time
t
f
8
ns
Total Gate Charge
Q
g
27
nC
V
DS
=24V,V
GS
=10V,
I
D
=3.7A
Gate-Source Charge
Q
gs
5
nC
Gate-Drain Charge
Q
gd
4.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25 C, I
S
=3.7A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
24.5
ns
T
J
=25 C, I
F
=3.7A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Q
rr
19.1
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
2% .
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| ZXM64N035L3_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:35V N-CHANNEL ENHANCEMENT MODE MOSFET |
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