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參數(shù)資料
| 型號： | ZXM62P03E6 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 1600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 6 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 205K |
| 代理商： | ZXM62P03E6 |
116
ZXM62P03E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
μ
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GSS
±
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.15
0.23
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-0.8A
Forward Transconductance (3)
g
fs
1.1
S
V
DS
=-10V,I
D
=-0.8A
DYNAMIC (3)
Input Capacitance
C
iss
330
pF
V
=-25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
45
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.8
ns
V
DD
=-15V, I
D
=-1.6A
R
=6.2
, R
=25
(Refer to test circuit)
Rise Time
t
r
6.4
ns
Turn-Off Delay Time
t
d(off)
13.9
ns
Fall Time
t
f
10.3
ns
Total Gate Charge
Q
g
10.2
nC
V
DS
=-24V,V
GS
=-10V,
I
(Refer to test circuit)
Gate-Source Charge
Q
gs
1.5
nC
Gate Drain Charge
Q
gd
3
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25°C, I
S
=-1.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
19.9
ns
T
=25°C, I
=-1.6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
13
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXM62P03E6 | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6 |
| ZXM62P03E6_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM62P03E6TA | 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM62P03E6TC | 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM62P03G | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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