參數(shù)資料
型號： ZXM62P02E6
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 20V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 6 PIN
文件頁數(shù)： 4/7頁
文件大小： 203K
代理商： ZXM62P02E6
108
ZXM62P02E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-20
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
μ
A
V
DS
=-20V, V
GS
=0V
Gate-Body Leakage
I
GSS
±
100
nA
V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-0.7
V
I
D
=-250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.2
0.375
V
GS
=-4.5V, I
D
=-1.6A
V
GS
=-2.7V, I
D
=-0.8A
Forward Transconductance (3)
g
fs
1.5
S
V
DS
=-10V,I
D
=-0.8A
DYNAMIC
(3)
Input Capacitance
C
iss
320
pF
V
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
150
pF
Reverse Transfer Capacitance
C
rss
75
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.1
ns
V
DD
=-10V, I
D
=-1.6A
R
=6.0
, R
=6.1
(Refer to test circuit)
Rise Time
t
r
15.4
ns
Turn-Off Delay Time
t
d(off)
12.0
ns
Fall Time
t
f
19.2
ns
Total Gate Charge
Q
g
5.8
nC
V
DS
=-16V,V
GS
=-4.5V,
I
(Refer to test circuit)
Gate-Source Charge
Q
gs
1.25
nC
Gate Drain Charge
Q
gd
2.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25°C, I
S
=-1.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
22.5
ns
T
=25°C, I
=-1.6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
10.4
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM62P02E6 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6
ZXM62P02E6_04 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P02E6TA 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM62P02E6TA-CUT TAPE 制造商:DIODES 功能描述:ZXM62P02E6 20 V 0.2 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23-6
ZXM62P02E6TC 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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