參數(shù)資料
型號： ZXM62N03GTC
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 3400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-223, 4 PIN
文件頁數(shù)： 4/7頁
文件大?。?/td> 153K
代理商： ZXM62N03GTC
ZXM62N03G
ISSUE 1 - OCTOBER 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
1
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1.0
V
I
D
=250 A, V
DS
= V
GS
V
GS
=10V, I
D
=2.2A
V
GS
=4.5V, I
D
=1.1A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.11
0.15
Forward Transconductance (1)(3)
g
fs
1.1
S
V
DS
=15V,I
D
=1.1A
DYNAMIC
(3)
Input Capacitance
C
iss
380
pF
V
=25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
90
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.9
ns
V
DD
=15V, I
D
=2.2A
R
G
=6.0
,
V
GS
=10V
Rise Time
t
r
5.6
ns
Turn-Off Delay Time
t
d(off)
11.7
ns
Fall Time
t
f
6.4
ns
Total Gate Charge
Q
g
9.6
nC
V
DS
=24V,V
GS
=10V,
I
D
=2.2A
Gate-Source Charge
Q
gs
1.7
nC
Gate-Drain Charge
Q
gd
2.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.95
V
T
J
=25 C, I
S
=2.2A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
18.8
ns
T
=25 C, I
=2.2A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Q
rr
11.4
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
2% .
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