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參數(shù)資料
| 型號(hào)： | ZXM61P03FTC |
| 廠商： | ZETEX PLC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-99; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No |
| 中文描述： | 1100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 229K |
| 代理商： | ZXM61P03FTC |
ZXM61P03F
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
200
°C/W
Junction to Ambient (b)
R
θ
JA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
<
5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
82
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
V
GS
I
D
-30
±
20
V
Gate- Source Voltage
V
Continuous Drain Current (V
GS
=-10V; T
A
=25°C)(b)
(V
GS
=-10V; T
A
=70°C)(b)
Pulsed Drain Current (c)
-1.1
-0.9
A
I
DM
I
S
I
SM
P
D
-4.3
A
Continuous Source Current (Body Diode)(b)
-0.88
A
Pulsed Source Current (Body Diode)(c)
-4.3
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
PROVISIONAL ISSUE A - JULY 1999
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| ZXM61P02 | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61N02 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61N02F | 71-254216-26H |
| ZXM61N02FTA | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61N02FTC | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXM62N02E6 | 制造商:Diodes Incorporated 功能描述: 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 |
| ZXM62N02E6_04 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM62N02E6TA | 功能描述:MOSFET 20V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM62N02E6TC | 功能描述:MOSFET 20V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXM62N03E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 |
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