參數(shù)資料
型號(hào)： ZXM61N03FTA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 1400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 216K
代理商： ZXM61N03FTA
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
μ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.22
0.30
V
GS
=10V, I
D
=0.91A
V
GS
=4.5V, I
D
=0.46A
Forward Transconductance (3)
g
fs
0.87
S
V
DS
=10V,I
D
=0.46A
DYNAMIC
(3)
Input Capacitance
C
iss
150
pF
V
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
35
pF
Reverse Transfer Capacitance
C
rss
15
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.9
ns
V
DD
=15V, I
D
=0.91A
R
=6.2
, R
D
=16
(refer to test
circuit)
Rise Time
t
r
2.5
ns
Turn-Off Delay Time
t
d(off)
5.8
ns
Fall Time
t
f
3.0
ns
Total Gate Charge
Q
g
4.1
nC
V
DS
=24V,V
GS
=10V,
I
=0.91A
(refer to test
circuit)
Gate-Source Charge
Q
gs
0.4
nC
Gate-Drain Charge
Q
gd
0.63
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25°C, I
S
=0.91A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
11.0
ns
T
=25°C, I
=0.91A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
3.5
nC
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
68
ZXM61N03F
PROVISIONAL ISSUE A - MAY 1999
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