參數(shù)資料
型號(hào): ZXM61N02F
廠商: ZETEX PLC
元件分類: 小信號(hào)晶體管
英文描述: 71-254216-26H
中文描述: 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SOT-23, 3 PIN
文件頁數(shù): 6/7頁
文件大?。?/td> 229K
代理商: ZXM61N02F
TYPICAL CHARACTERISTICS
0.1
10
100
0
3
-V
DS
- Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
200
C
ID=-0.6A
-
G
10
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=-15V
Coss
Crss
Vgs=0V
f=1MHz
1
Ciss
300
250
150
100
50
0.5
1
1.5
2
2.5
2
4
6
8
3.5
4
4.5
14
12
VDS=-24V
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
ZXM61P03F
86
PROVISIONAL ISSUE A - JULY 1999
相關(guān)PDF資料
PDF描述
ZXM61N02FTA 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N02FTC 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P02FTA 20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P02FTC 20V P-CHANNEL ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM61N02FTA 功能描述:MOSFET 20V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM61N02FTA-CUT TAPE 制造商:DIODES 功能描述:ZXM61N02F 20 V 0.18 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23
ZXM61N02FTC 功能描述:MOSFET 20V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM61N03F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1. 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 1.4A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):220mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes
ZXM61N03F_04 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET