參數(shù)資料
型號(hào)： ZXM61N02
廠商： Zetex Semiconductor
英文描述： 20V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 20V的N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 229K
代理商： ZXM61N02
84
ZXM61P03F
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
μ
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GSS
±
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.35
0.55
V
GS
=-10V, I
D
=-0.6A
V
GS
=-4.5V, I
D
=-0.3A
Forward Transconductance (3)
g
fs
0.44
S
V
DS
=-10V,I
D
=-0.3A
DYNAMIC
(3)
Input Capacitance
C
iss
140
pF
V
=-25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
45
pF
Reverse Transfer Capacitance
C
rss
20
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.9
ns
V
DD
=-15V, I
D
=-0.6A
R
=6.2
, R
=25
(Refer to test circuit)
Rise Time
t
r
2.9
ns
Turn-Off Delay Time
t
d(off)
8.9
ns
Fall Time
t
f
5.0
ns
Total Gate Charge
Q
g
4.8
nC
V
DS
=-24V,V
GS
=-10V,
I
(Refer to test circuit)
Gate-Source Charge
Q
gs
0.62
nC
Gate Drain Charge
Q
gd
1.3
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25°C, I
S
=-0.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
14.8
ns
T
=25°C, I
=-0.6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
7.7
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
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ZXM61N02F 71-254216-26H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXM61N02F 制造商:Diodes Incorporated 功能描述:MOSFET N 20V 1.7A SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, 20V, 1.7A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Cu 制造商:Diodes Incorporated 功能描述:MOSFET, N, 20V, 1.7A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Cu 制造商:Diodes Incorporated 功能描述:N CHANNEL MOSFET, 20V, 1.7A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1.7A, Drain Source Voltage Vds:20V, On Resistance Rds(on):180mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:700mV , RoHS Compliant: Yes
ZXM61N02FTA 功能描述:MOSFET 20V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM61N02FTA-CUT TAPE 制造商:DIODES 功能描述:ZXM61N02F 20 V 0.18 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23
ZXM61N02FTC 功能描述:MOSFET 20V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXM61N03F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1. 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 1.4A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:1.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):220mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes
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