參數(shù)資料
型號(hào)： ZX5T851A
廠商： Zetex Semiconductor
英文描述： 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
中文描述： 60V的npn型低飽和中功率晶體管E系列
文件頁數(shù)： 4/6頁
文件大?。?/td> 105K
代理商： ZX5T851A
ZX5T851A
S E M IC O N D U C T O R S
ISSUE 1 - NOVEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
150
190
V
I
C
=100 A
I
C
=1 A, RB
I
C
=10mA*
I
E
=100 A
V
CB
=120V
V
CB
=120V, T
amb
=100 C
V
CB
=120V
V
CB
=120V, T
amb
=100 C
V
EB
=6V
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Collector-emitter breakdown voltage
150
190
V
1k
Collector-emitter breakdown voltage
60
80
V
Emitter-base breakdown voltage
7
8.1
V
Collector cut-off current
20
0.5
nA
A
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
Emitter cut-off current
I
EBO
V
CE(S AT)
10
nA
Collector-emitter saturation voltage
18
40
45
95
170
30
55
65
130
210
mV
mV
mV
mV
mV
Base-emitter saturation voltage
V
BE(S AT)
V
BE(ON)
h
FE
950
1050
mV
Base-emitter turn-on voltage
840
950
mV
Static forward current transfer ratio
100
100
55
20
200
200
105
40
300
Transition frequency
f
T
130
Output capacitance
C
OBO
t
ON
t
OFF
31
pF
V
CB
=10V, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
Switching times
42
760
ns
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
相關(guān)PDF資料
PDF描述
ZX5T851ASTOA 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
ZX5T851ASTZ 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
ZX5T851G Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
ZX5T851GTA 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZX5T851GTC Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Straight Plug
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZX5T851ASTOA 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
ZX5T851ASTZ 功能描述:兩極晶體管 - BJT NPN 60V 4.5A 3-PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX5T851G 制造商:ZETEX 制造商全稱:ZETEX 功能描述:60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZX5T851GTA 功能描述:兩極晶體管 - BJT NPN 60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX5T851GTC 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
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