- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373838 > ZX5.6 (DIOTEC SEMICONDUCTOR AG) Silicon-Power-Z-Diodes (non-planar technology) PDF資料下載
參數(shù)資料
| 型號： | ZX5.6 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Silicon-Power-Z-Diodes (non-planar technology) |
| 中文描述： | 硅功率的Z -二極管（非平面技術(shù)） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 112K |
| 代理商： | ZX5.6 |
1
) Valid if mounted on vertical cooling fin 150 cm
2
– Gültig bei Montage auf senkrecht stehendem Kühlblech 150 cm
2
10.09.2002
1
ZX 3.9 ... ZX 200 (12.5 W)
Silicon-Power-Z-Diodes
(non-planar technology)
Silizium-Leistungs-Z-Dioden
(flchendiffundierte Dioden)
Maximum power dissipation
Maximale Verlustleistung
12.5 W
Nominal Z-voltage – Nominale Z-Spannung
3.9…200 V
Metal case – Metallgehuse
DO-4
Weight approx. – Gewicht ca.
5.5 g
Standard polarity:
Index R:
Cathode to stud / Gewinde
Anode to stud / Gewinde (e.g. ZX ...R)
Dimensions / Mae in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
Standard Zener voltage tolerance is graded to the international E 24 (~5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen
Reihe E 24 (~5%). Andere Toleranzen oder hhere Arbeitsspannungen auf Anfrage.
Maximum ratings
Grenzwerte
Power dissipation without cooling fin
Verlustleistung ohne Kühlblech
T
A
= 25 C
P
tot
1.6 W
Power dissipation with cooling fin 150 cm
2
Verlustleistung mit Kühlblech 150 cm
2
T
A
= 25 C
P
tot
12.5 W
Non repetitive peak power dissipation, t < 10 ms
Einmalige Impuls-Verlustleistung, t < 10 ms
T
A
= 25 C
P
ZSM
100 W
Admissible torque for mounting on cooling fin
Zulssiges Anzugsdrehmoment
1 Nm
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 55…+150 C
– 55…+175 C
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
R
thA
< 80 K/W
Thermal resistance junction to stud
Wrmewiderstand Sperrschicht – Schraube
R
thC
< 5 K/W
1
)
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nchsten Seite
1
1
3
M5
SW11
7
Type
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZX51 | Silicon-Power-Z-Diodes (non-planar technology) |
| ZX56 | Silicon-Power-Z-Diodes (non-planar technology) |
| ZX4.3 | 71-406653-41S |
| ZX43 | Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-41; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No |
| ZX47 | Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-41 RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZX56R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ZX5T1951GTA | 制造商:Diodes Incorporated 功能描述:ZETEX GEN 5 MEDIUM POWER TX UNLEADED 1K - Tape and Reel 制造商:Diodes Incorporated 功能描述:TRANS PNP 60V 6A SOT223 制造商:Diodes Incorporated 功能描述:60V PNP MED PWR TRANSISTOR |
| ZX5T2E6 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 |
| ZX5T2E6TA | 功能描述:兩極晶體管 - BJT PNP 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZX5T2E6TC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 |
發(fā)布緊急采購，3分鐘左右您將得到回復。