參數(shù)資料
型號(hào)： ZX3CD1S1M832
廠商： Zetex Semiconductor
英文描述： 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
中文描述： 12V的進(jìn)步黨低飽和晶體管和40V，1A條肖特基二極管組合雙
文件頁數(shù)： 6/9頁
文件大?。?/td> 355K
代理商： ZX3CD1S1M832
ZX3CD1S1M832
ISSUE 1 - JUNE 2002
6
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V
(BR)CBO
-20
-35
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-7.5
-8.5
V
I
E
=-100 A
V
CB
=-16V
V
EB
=-6V
V
CES
=-10V
I
C
=-0.1A, I
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
=-50mA*
I
C
=-3A, I
B
=-50mA*
I
C
=-4A, I
B
=-150mA*
I
C
=-4A, I
B
=-150mA*
I
C
=-4A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
=-50mA, V
CE
=-10V
f=100MHz
Collector Cut-Off Current
-25
nA
Emitter Cut-Off Current
-25
nA
Collector Emitter Cut-Off Current
-25
nA
Collector-Emitter Saturation
Voltage
-10
-100
-100
-195
-240
-17
-140
-150
-300
-300
mV
mV
mV
mV
mV
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
-0.97
-1.05
V
Base-Emitter Turn-On Voltage
-0.87
-0.950
V
Static Forward Current Transfer
Ratio
300
300
180
60
45
475
450
275
100
70
Transition Frequency
f
T
100
110
MHz
Output Capacitance
C
obo
t
(on)
t
(off)
21
30
pF
V
CB
=-10V, f=1MHz
V
CC
=-6V, I
=-2A
I
B1
=I
B2
=-50mA
Turn-On Time
70
ns
Turn-Off Time
130
ns
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)R
V
F
40
60
V
I
R
=300 A
I
F
=50mA*
I
F
=100mA*
I
F
=250mA*
I
F
=500mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
I
F
=1000mA,T
a
=100°C*
V
R
=30V
f=1MHz,V
R
=25V
switched from
I
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Forward Voltage
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
Reverse Current
I
R
C
D
t
rr
50
100
A
Diode Capacitance
25
pF
Reverse Recovery
Time
12
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions.
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZX3CD1S1M832TA 功能描述:兩極晶體管 - BJT PNP 12V/1A Sch Comb RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX3CD1S1M832TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
ZX3CD2S1M832 制造商:ZETEX 制造商全稱:ZETEX 功能描述:MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
ZX3CD2S1M832TA 功能描述:兩極晶體管 - BJT PNP 20V/1A Sch Comb RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
ZX3CD2S1M832TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
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