參數(shù)資料
型號(hào)： ZVP4525ZTA
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： 250V P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 205 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 4/8頁
文件大?。?/td> 399K
代理商： ZVP4525ZTA
ISSUE 1 - MARCH 2001
ZVP4525Z
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-250
-285
V
I
D
=-1mA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-30
-500
nA
V
DS
=-250V, V
GS
=0V
Gate-Body Leakage
I
GSS
±1
±100
nA
V
GS
=
±
40V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-0.8
-1.5
-2.0
V
I
D
=-1mA, V
DS
= V
GS
V
GS
=-10V, I
D
=-200mA
V
GS
=-3.5V, I
D
=-100mA
Static Drain-Source On-State Resistance (1)
R
DS(on)
10
13
14
18
Forward Transconductance (3)
g
fs
80
200
mS
V
DS
=-10V,I
D
=-0.15A
DYNAMIC
(3)
Input Capacitance
C
iss
73
pF
V
=-25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
12.8
pF
Reverse Transfer Capacitance
C
rss
3.91
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.53
ns
V
DD
=-30V, I
D
=-200mA
R
=50
, V
=-10V
(refer to test circuit)
Rise Time
t
r
3.78
ns
Turn-Off Delay Time
t
d(off)
17.5
ns
Fall Time
t
f
7.85
ns
Total Gate Charge
Q
g
2.45
3.45
nC
V
DS
=-25V,V
=-10V,
I
=-200mA(refer to
test circuit)
Gate-Source Charge
Q
gs
0.22
0.31
nC
Gate Drain Charge
Q
gd
0.45
0.63
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.97
V
T
j
=25°C, I
S
=-200mA,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
205
290
ns
T
=25°C, I
=-200mA,
di/dt=100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
21
29
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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