參數(shù)資料
型號: ZVP4525Z(1)
廠商: Zetex Semiconductor
文件頁數(shù): 2/8頁
文件大?。?/td> 399K
代理商: ZVP4525Z(1)
ISSUE 1 - MARCH 2001
ZVP4525Z
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
103
°C/W
Junction to Ambient (b)
R
θ
JA
50
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
250
V
Gate Source Voltage
V
GS
I
D
I
D
±
40
V
Continuous Drain Current (V
GS
=10V; TA=25°C)(a)
(V
GS
=10V; TA=70°C)(a)
-205
-164
mA
mA
Pulsed Drain Current (c)
I
DM
-1
A
Continuous Source Current (Body Diode)
I
S
-0.75
A
Pulsed Source Current (Body Diode)
I
SM
P
D
-1
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
1.2
9.6
W
mW/°C
Operating and Storage Temperature Range
T
j
:
T
stg
-55 to +150
°C
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