參數(shù)資料
型號： ZVP4105
廠商： Zetex Semiconductor
英文描述： P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述： P溝道增強(qiáng)型場效應(yīng)管垂直的DMOS
文件頁數(shù)： 1/1頁
文件大小： 49K
代理商： ZVP4105
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*
50 Volt V
DS
*
R
DS(on)
=10
*
Low threshold
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
-50
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
-175
mA
-520
mA
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
625
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-50
V
I
D
=-0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-0.8
-2.0
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=-50V, V
GS
=0V
V
DS
=-50V, V
GS
=0V, T=125°C
(2)
V
DS
=-25V, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-15
-60
-100
μ
A
μ
A
nA
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10
V
GS
=-5V,I
D
=-100mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V,I
D
=-100mA
Input Capacitance (2)(4)
C
iss
C
oss
40
pF
Common Source Output
Capacitance (2)(4)
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)(4)
C
rss
6
pF
Turn-On Delay Time (2)(3)(4)
t
d(on)
t
r
10
ns
V
DD
≈
-30V, I
D
=-270mA
Rise Time (2)(3)(4)
10
ns
Turn-Off Delay Time (2)(3)(4) t
d(off)
Fall Time (2)(3)(4)
18
ns
t
f
25
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
(
4
)
E-Line
TO92 Compatible
ZVP4105A
3-435
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVP4105A 功能描述:MOSFET P-Chnl 50V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP4105ASTOA 功能描述:MOSFET P-Chnl 50V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP4105ASTOB 功能描述:MOSFET P-Chnl 50V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP4105ASTZ 功能描述:MOSFET P-Chnl 50V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVP4424A 功能描述:MOSFET P-Chnl 240V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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