參數(shù)資料
型號(hào)： ZNBR6000
廠商： Zetex Semiconductor
英文描述： FET BIAS CONTROLLER
中文描述： 場(chǎng)效應(yīng)管偏置控制器
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 183K
代理商： ZNBR6000
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
Supply Current
Drain Current (per FET)
(set by R
CAL1
and R
CAL2
)
Output Current
Operating Temperature
Storage Temperature
-0.6V to 15V
100mA
0 to 15mA
100mA
-40 to 70°C
-50 to 85°C
Power Dissipation (T
amb
=
25°C)
QSOP16
QSOP20
500mW
650mW
ZNBR4000 ZNBR4001
ZNBR6000 ZNBR6001
2
ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated):
T
amb
=
25°C,V
CC
=4V,I
D
=10mA (R
CAL1
=33k
;R
CAL2
=33k
)
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
Min
3.5
3.0
Typ
Max
12
V
CC
Supply Voltage
ZNBR4000/6000
ZNBR4001/6001
I
D1
to I
D4
=0
I
D1
to I
D4
=10mA
I
D1
to I
D6
=0
I
D1
to I
D6
=10mA
I
SUB
= 0
I
SUB
= -200
μ
A
V
I
CC
Supply Current
ZNBR4000/1
Supply Current
ZNBR6000/1
Substrate Voltage
(Internally generated)
10
50
15
75
-1.8
-1.8
mA
mA
mA
mA
V
V
I
CC
V
SUB
E
ND
E
NG
f
O
DRAIN CHARACTERISTICS
I
D
Current
Current Change
I
DV
with V
CC
I
DT
with T
j
V
D
Voltage
ZNBR4000, ZNGB6000
ZNBR4001, ZNBR6001
Voltage Change
V
DV
with V
CC
V
DT
with T
j
Output Noise
Drain Voltage
Gate Voltage
Oscillator Freq.
C
G
=4.7nF, C
D
=10nF
C
G
=4.7nF, C
D
=10nF
0.02
0.005
800
Vpkpk
Vpkpk
kHz
200
350
8
10
12
mA
V
CC
=5 to 12V
T
j
=-40 to +70°C
0.02
%/V
0.05
%/°C
2
1.8
2.2
2
2.4
2.2
V
V
V
CC
= 5 to 12V
T
j
= -40 to +70°C
0.5
%/V
50
ppm
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