參數(shù)資料
型號(hào): ZNBR4001
廠商: Zetex Semiconductor
英文描述: CONVERTER/BRAKE/INVERTER 2.3VCE
中文描述: 場(chǎng)效應(yīng)管偏置控制器
文件頁(yè)數(shù): 5/10頁(yè)
文件大小: 183K
代理商: ZNBR4001
FUNCTIONAL DIAGRAM
FUNCTIONAL DESCRIPTION
The ZNBR devices provide all the bias requirements for external FETs, including the generation
of the negative supply required for gate biasing, from the single supply voltage.
The diagram above shows a single stage from the ZNBR series. The ZNBR4000/1 contains 4 such
stages, the ZNBR6000/1 contains 6. The negative rail generator is common to all devices.
The drain voltage of the external FET Q
N
is set by the ZNBR device to its normal operating voltage.
This is determined by the on board V
Set reference, for the ZNBR4000/6000 this is nominally
2.2 volts whilst the ZNBR4001/6001 provides nominally 2 volts.
The drain current taken by the FET is monitored by the low value resistor I
D
Sense. The amplifier
driving the gate of the FET adjusts the gate voltage of Q
N
so that the drain current taken matches
the current called for by an external resistor R
CAL
. Both ZNBR devices have the facility to program
different drain currents into selected FETs. Two R
CAL
inputs are provided. For the ZNBR4000,
resistor R
CAL1
sets the drain current of FETs 1 and 2, resistor R
CAL2
sets the drain current of FETs
3 and 4. For the ZNBR6000, resistor R
CAL1
sets the drain current of FETs 1 and 4, resistor R
CAL2
sets the drain current of FETs 2, 3, 5 and 6.
Since the FET is a depletion mode transistor, it is usually necessary to drive its gate negative with
respect to ground to obtain the required drain current. To provide this capability powered from
a single positive supply, the device includes a low current negative supply generator. This
generator uses an internal oscillator and two external capacitors, C
NB
and C
SUB
.
ZNBR4000 ZNBR4001
ZNBR6000 ZNBR6001
5
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