參數(shù)資料
型號: ZNBR4000
廠商: Zetex Semiconductor
英文描述: DIODE MOD 1200V 2X120A TO-240AA
中文描述: 場效應(yīng)管偏置控制器
文件頁數(shù): 3/10頁
文件大小: 183K
代理商: ZNBR4000
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
Min
Typ
Max
GATE CHARACTERISTICS
I
GO
Output Current Range
Output Voltage
ZNBR4000/1
V
OL
Output Low
-30
2000
μ
A
I
D1
to I
D4
=12mA
I
G1
to I
G4
=0
I
D1
to I
D4
=12mA
I
G1
to I
G4
= -10
μ
A
I
D1
to I
D4
= 8mA
I
G1
to I
G4
= 0
-2.5
-1.8
V
-2.5
-1.8
V
V
OH
Output High
0
1
V
Output Voltage
ZNBR6000/1
Output Low
V
OL
I
D1
to I
D6
=12mA
I
G1
to I
G6
= 0
I
D1
to I
D6
=12mA
I
G1
to I
G6
= -10
μ
A
I
D1
to I
D6
= 8mA
I
G1
to I
G6
= 0
-2.5
-1.8
V
-2.5
-1.8
V
V
OH
Output High
0
1
V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C
NB
and C
SUB
, of
47nF are required for this purpose.
2. The characteristics are measured using two external reference resistors R
and R
of value 33k
wired from pins R
to
ground. For the ZNBR4000, resistor R
sets the drain current of FETs 1 and 2, resistor R
sets the drain current of FETs 3 and 4.
For the ZNBR6000, resistor R
CAL1
sets the drain current of FETs 1 and 4, resistor R
CAL2
sets the drain current of FETs 2, 3, 5 and 6.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. C
G
, 4.7nF, are connected between
gate outputs and ground, C
D
, 10nF, are connected between drain outputs and ground.
ZNBR4000 ZNBR4001
ZNBR6000 ZNBR6001
3
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