參數(shù)資料
型號(hào): ZNBG6000
廠商: Zetex Semiconductor
英文描述: FET BIAS CONTROLLER
中文描述: 場(chǎng)效應(yīng)管偏置控制器
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 421K
代理商: ZNBG6000
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
Min
Typ
Max
GATE CHARACTERISTICS
I
GO
Output Current Range
Output Voltage
ZNBG4000/1
V
OL
Output Low
-30
2000
μ
A
I
D1
to I
D4
=12mA
I
G1
to I
G4
=0
I
D1
to I
D4
=12mA
I
G1
to I
G4
= -10
μ
A
I
D1
to I
D4
= 8mA
I
G1
to I
G4
= 0
-3.5
-2
V
-3.5
-2
V
V
OH
Output High
0
1
V
Output Voltage
ZNBG6000/1
Output Low
V
OL
I
D1
to I
D6
=12mA
I
G1
to I
G6
= 0
I
D1
to I
D6
=12mA
I
G1
to I
G6
= -10
μ
A
I
D1
to I
D6
= 8mA
I
G1
to I
G6
= 0
-3.5
-2
V
-3.5
-2
V
V
OH
Output High
0
1
V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C
NB
and C
SUB
, of
47nF are required for this purpose.
2. The characteristics are measured using two external reference resistors R
and R
of value 33k
wired from pins R
to
ground. For the ZNBG4000, resistor R
CAL1
sets the drain current of FETs 1 and 2, resistor R
CAL2
sets the drain current of FETs 3 and 4.
For the ZNBG6000, resistor R
CAL1
sets the drain current of FETs 1 and 4, resistor R
CAL2
sets the drain current of FETs 2, 3, 5 and 6.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all
outputs. C
G
, 4.7nF, are connected between gate outputs and ground, C
D
, 10nF, are connected
between drain outputs and ground.
ZNBG4000 ZNBG4001
ZNBG6000 ZNBG6001
4-139
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