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參數資料
| 型號： | ZNBG4210Q24 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 406K |
| 代理商： | ZNBG4210Q24 |
FET BIAS CONTROLLER
ISSUE 2 - JUNE 1998
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR, cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and
resistors the devices provide drain voltage
and current control for a number of external
grounded source FETs, generating the
regulated negative rail required for FET gate
biasing whilst operating from a single
supply. This negative bias, at -3 volts, can
also be used to supply other external
circuits.
The ZNBG4000/1 and ZNBG6000/1 contain
four and six bias stages respectively. In
setting drain current the ZNBG4000/1 two
resistors allows individual FET pair control
to different levels, the ZNBG6000/1 two
resistors split control between two and four
FETs. This allows the operating current of
input FETs to be adjusted to minimise noise,
whilst the following FET stages can
separately be adjusted for maximum gain.
The series also offers the choice of drain
voltage to be set for the FETs, the
ZNBG4000/6000 gives 2.2 volts drain whilst
the ZNBG4001/6001 gives 2 volts.
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 0.7V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG4000/1 and ZNBG6000/1 are
available in QSOP16 and 20 pin packages
respectively for the minimum in devices size.
Device operating temperature is -40 to 70°C
to suit a wide range of environmental
conditions.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to four or six FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
QSOP surface mount package
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
ZNBG4000 ZNBG4001
ZNBG6000 ZNBG6001
4-137
相關PDF資料 |
PDF描述 |
|---|---|
| ZNBG4001Q16 | FET BIAS CONTROLLER |
| ZNBG4000Q16 | FET BIAS CONTROLLER |
| ZNBG4001 | FET BIAS CONTROLLER |
| ZNBG6001Q20 | FET BIAS CONTROLLER |
| ZNGB6000 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:15; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ZNBG4210Q24TC | 制造商:Diodes Incorporated 功能描述:4 BIAS+TONE+H/V SWITCH(-0V GATE) VD=2.2V - Tape and Reel |
| ZNBG5116Q24TC | 功能描述:MOSFET 7BIAS TONE H/V SWTVE 2.0V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZNBG6000 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER |
| ZNBG6000Q20 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:FET BIAS CONTROLLER |
| ZNBG6000Q20TC | 功能描述:接口 - 專用 FET BIAS CONTROLLER 6 Stage RoHS:否 制造商:Texas Instruments 產品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:BGA-59 |
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