參數(shù)資料
型號(hào)： ZNBG3116Q16(1)
廠商： Zetex Semiconductor
文件頁(yè)數(shù)： 3/14頁(yè)
文件大小： 1845K
代理商： ZNBG3116Q16(1)
ZNBG3115
ZNBG3116
ISSUE 1 - JUNE 2001
3
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNITS
MIN.
TYP.
MAX.
GATE CHARACTERISTICS
I
GO
Output Current Range
-30
2000
A
I
Dx
(mA)
V
POL
(V)
I
GOx
(
A)
V
G1O
V
G1L
V
G1H
Output Voltage
Gate 1
Off
Low
High
I
D1
=0
I
D1
=12 V
POL
=15.5 I
GO1
=-10
I
D1
=8
V
POL
=15.5 I
GO1
=0
V
POL
=14
I
GO1
=-10
-2.5
-2.5
0.4
-2.25
-2.25
0.75
-2.0
-2.0
1.0
V
V
V
V
G2O
V
G2L
V
G2H
Output Voltage
Gate 2
Off
Low
High
I
D2
=0
I
D2
=12 V
POL
=14
I
D2
=8
V
POL
=14
V
POL
=15.5 I
GO2
=-10
I
GO2
=-10
I
GO2
=0
-2.5
-2.5
0.4
-2.25
-2.25
0.75
-2.0
-2.0
1.0
V
V
V
V
G3L
V
G3H
DRAIN CHARACTERISTICS
Output Voltage
Gate 3
Low
High
I
D3
=12
I
D3
=8
I
GO3
=-10
I
GO3
=0
-3.0
0.4
-2.75
0.75
-2.5
1.0
V
V
I
D
I
Drng
Current
8
10
12
mA
Current range
Set by R
cal
0
15
mA
I
DV
I
DV
Current Change
with V
CC
with T
j
V
CC
= 5 to 10V
T
j
=-40 to +80°C
0.5
0.05
%/V
%/°C
V
D1
Drain 1 Voltage: High
ZNBG3115
ZNBG3116
I
D1
=10mA, V
POL
=15.5V
I
D1
=10mA, V
POL
=15.5V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
D2
Drain 2 Voltage: High
ZNBG3115
ZNBG3116
I
D2
=10mA, V
POL
=14V
I
D2
=10mA, V
POL
=14V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
D3
Drain 3 Voltage: High
ZNBG3115
ZNBG3116
I
D3
=10mA, V
POL
=15.5V
I
D3
=10mA, V
POL
=15.5V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
DV
V
DT
Voltage Change
with V
CC
with T
j
V
CC
= 5 to 10V
T
j
=-40 to +80°C
0.5
50
%/V
ppm
I
L1
I
L2
Leakage Current
Drain 1
Drain 2
V
D1
=0.5V, V
POL
=14V
V
D2
=0.5V, V
POL
=15.5V
10
10
A
A
QSOP20 only
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