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參數(shù)資料
| 型號： | ZDM4306N |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS |
| 中文描述： | 2000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SM-8, 8 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 36K |
| 代理商： | ZDM4306N |
3 - 321
SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE MOSFETS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL – M4306N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25°C
I
D
2
A
Pulsed Drain Current
I
DM
15
A
Gate-Source Voltage
V
GS
±
20
V
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
P
tot
2.5
3.0
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
20
24
mW/ °C
mW/ °C
Thermal Resistance - J unction to Ambient*
Any single die “on”
Both die “on” equally
50.0
41.6
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Note:
This data is derived from development material and does not necessarily mean that the device will
go into production
SM-8
(8 LEAD SOT223)
D
1
D
1
D
2
D
2
G
1
S
1
G
2
S
2
ZDM4306N
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