參數(shù)資料
型號(hào): Z0409NF0AA2
廠商: 意法半導(dǎo)體
元件分類(lèi): 三端雙向可控硅開(kāi)關(guān)
英文描述: 4A TRIACS
中文描述: 第4A雙向可控硅
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 55K
代理商: Z0409NF0AA2
Z04 Series
4/6
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2:
RMS on-state current versus ambient
temperature (full cycle).
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
7
IT(RMS)(A)
P(W)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IT(RMS)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
Tamb(°C)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
tp(s)
K=[Zth(j-a)/Rth(j-a)]
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
1
10
100
1000
0
5
10
15
20
25
Number of cycles
ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tamb=25°C
One cycle
t=20ms
0.01
0.10
1.00
10.00
1
10
100
500
tp (ms)
ITSM (A), I2t (A2s)
Tj initial=25°C
ITSM
I2t
dI/d20A/μs
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